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Navitas Contributes GaN and SiC to NVIDIA’s 800V HVDC Initiative

Navitas Semiconductor announced its participation in NVIDIA’s effort to develop an 800V high-voltage direct current (HVDC) architecture aimed at improving power delivery in next-generation AI data centers. The company’s gallium nitride (GaN) and silicon carbide (SiC) power semiconductors will be used to support rack-scale systems such as NVIDIA’s Kyber platform, targeting power capacities of 1 megawatt and above.

The shift to 800V HVDC architecture is intended to improve efficiency and reduce the complexity of traditional 54V data center power distribution. By converting 13.8kV AC grid power directly to 800V HVDC at the facility perimeter, the system minimizes intermediate conversion steps and reduces copper requirements. Navitas’ GaNFast™ and GeneSiC™ devices are positioned to support both primary high-voltage conversion and secondary DC-DC conversion within the rack.

Navitas has introduced several data center-optimized power solutions in recent years, including an 8.5 kW power supply with 98% efficiency and compact form factors compliant with Open Compute Project (OCP) specifications. Its patented IntelliWeave™ control architecture and GaNSafe™ power ICs are designed to improve power factor correction and system reliability in high-density compute environments.

“We are proud to be selected by NVIDIA to collaborate on their 800 HVDC architecture initiative. Our latest innovations in high-power GaN and SiC technologies have seen world firsts and have created new inflections into markets such as AI datacenters and electric vehicles,” said Gene Sheridan, CEO and co-founder of Navitas.

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