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Samsung charts progress from 10nm to 3mm Gate-All-Around

Samsung Electronics is making rapid progress in 3nm Gate-All-Around (GAA) process technology, which could see first tape out in 2021 and mass market production as early as 2022.

Compared to 7nm technology, Samsung’s 3GAE process aims to deliver a 45% reduction in chip area with 50% percent lower power consumption, and 35% higher performance, potentially benefiting applications as diverse as mobile, network, automotive, Artificial Intelligence (AI) and IoT.   Samsung’s GAA MBCFET (Multi-Bridge-Channel FET) uses a nanosheet architecture, enabling greater current per stack. WhileFinFET structures must modulate the number of fins in a discrete way, MBCFET™provides greater design flexibility by controlling the nanosheet width.

At Samsung Foundry Forum event in Santa Clara California, company executives outlined the fabrication roadmap from today’s 10nm down to 3nm. Some highlights:

“We stand at the verge of the Fourth Industrial Revolution, a new era of high-performance computing and connectivity that will advance the daily lives of everyone on the planet,” said Dr. ES Jung, President and head of Foundry Business at Samsung Electronics. “Samsung Electronics fully understands that achieving powerful and reliable silicon solutions requires not only the most advanced manufacturing and packaging processes as well as design solutions, but also collaborative foundry-customer relationships grounded on trust and shared vision. This year’s Foundry Forum is filled with compelling evidence of our commitment to progress in all those areas, and we’re honored to host and converse with our industry’s best and brightest,” Dr. Jung added.

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