
The new devices stack together eight 64-layer 512Gb V-NAND chips and a controller chip.
Samsung said its new 512GB UFS doubles the density of its previous 48-layer V-NAND-based 256GB eUFS, in the same amount of space as the 256GB package.

The new devices stack together eight 64-layer 512Gb V-NAND chips and a controller chip.
Samsung said its new 512GB UFS doubles the density of its previous 48-layer V-NAND-based 256GB eUFS, in the same amount of space as the 256GB package.