Samsung Electronics Co. announced its new High Bandwidth Memory (HBM2E) which promises to deliver the highest DRAM performance levels for use in next-generation supercomputers, graphics systems, and artificial intelligence (AI).
Flashbolt has a density of 16Gb per die, double the capacity of the previous generation. With these improvements, a single Samsung HBM2E package will offer a 410 gigabytes-per-second (GBps) data bandwidth and 16GB of memory.
“Flashbolt’s industry-leading performance will enable enhanced solutions for next-generation data centers, artificial intelligence, machine learning, and graphics applications,” said Jinman Han, senior vice president of Memory Product Planning and Application Engineering Team at Samsung Electronics. “We will continue to expand our premium DRAM offering, and improve our ‘high-performance, high capacity, and low power’ memory segment to meet market demand.”