The 960GB version boasts the highest level of performance, offering more than 20 percent increase in sequential and random write speeds by utilizing 64 dies of MLC 3D V-NAND flash, each offering 128 gigabits (Gb) of storage, with a six-gigabit-per-second SATA interface controller. The new V-NAND SSD also offers 35K program erase cycles and is available in a 2.5 inch form factor. Samsung began producing its new V-NAND SSDs earlier this month.
“By applying our 3D V-NAND – which has overcome the formidable hurdle of scaling beyond the 10-nanometer (nm) class, Samsung is providing its global customers with high density and exceptional reliability, as well as an over 20 percent performance increase and an over 40 percent improvement in power consumption,” said E.S. Jung, executive vice president, semiconductor R&D center at Samsung Electronics.