The Defense Advanced Research Projects Agency (DARPA) awarded a multiyear contract to TriQuint Semiconductor to develop high power wide band amplifiers in gallium nitride. Gallium nitride High Electron Mobility Transistor (HEMT) devices provide the higher power density and efficiency required for high power phased array radar, electronic warfare, missile seeker and communications systems.
TriQuint said the contract is in two phases. The first phase, lasting three years and valued at $15.8 million, covers the development of gallium nitride material and devices to improve performance and reliability. The second, optional phase covers years four and five and is valued at $15.9 million. This phase will develop gallium nitride high power, wide band amplifiers and package technology for insertion into Department of Defense (DoD) systems.
TriQuint is the prime contractor and is teamed with BAE Systems, Emcore Corporation, II-VI Incorporated, Lockheed Martin and Nitronex on the program. http://www.triquint.com
