NEO Semiconductor, a start-up based in San Jose, California, unveiled its “3D X-DRAM”, described at the world’s first 3D NAND-like DRAM cell array. Relevant patent applications were published with the United States Patent Application Publication on April 6, 2023.
NEO Semiconductor said its cell array structure is based on capacitor-less floating body cell technology. It can be manufactured using today’s 3D NAND-like process and only needs one mask to define the bit line holes and form the cell structure inside the holes. This cell structure simplifies the process steps and provides a high-speed, high-density, low-cost, and high-yield solution. Based on Neo’s estimates, 3D X-DRAM technology can achieve 128 Gb density with 230 layers, which is 8 times today’s DRAM density.
“3D X-DRAM will be the absolute future growth driver for the Semiconductor industry,” said Andy Hsu, Founder and CEO of NEO Semiconductor and an accomplished technology inventor with more than 120 U.S. patents. “Today I can say with confidence that Neo is becoming a clear leader in the 3D DRAM market. Our invention, compared to the other solutions in the market today, is very simple and less expensive to manufacture and scale. The industry can expect to achieve 8X density and capacity improvements per decade with our 3D X-DRAM.”
“Evolving from 2D to 3D architectures has introduced compelling and extremely valuable benefits to NAND flash, so achieving a similar evolution for DRAM is highly desirable industry-wide,” said Jay Kramer, President of Network Storage Advisors. “NEO Semiconductor’s innovative 3D X-DRAM™ allows the memory industry to leverage current technologies, nodes and processes for enhancing DRAM products with NAND-like 3D architectures.”
