HexaTech has secured a multi-year contract with the Defense Advanced Research Projects Agency (DARPA) under the Ultra-Wide Bandgap Semiconductors (UWBGS) program. The project aims to develop 100 mm aluminum nitride (AlN) substrates with low defect density to enhance the performance of high-voltage and high-frequency electronic devices. DARPA’s UWBGS program focuses on advancing materials for next-generation electronics, with HexaTech playing a key role in pushing the boundaries of AlN substrate technology.
The contract, valued at $10.2 million if fully executed over three years, accelerates HexaTech’s existing efforts to expand its AlN substrate production. By increasing the substrate diameter to 100 mm, the company seeks to improve device fabrication, performance, and reliability for both commercial and defense applications. The contract builds on HexaTech’s previously announced 100 mm development effort, and the company plans to scale its production process from crystal growth to substrate finishing.
HexaTech’s leadership emphasizes the strategic importance of this collaboration with DARPA. According to Gregory Mills, VP of Business Development, “The result of this program will be the direct translation of 100 mm AlN substrates into volume production, enabling industry adoption by both commercial and defense foundries.”
Key Points:
• HexaTech signs a multi-year contract with DARPA to develop 100 mm AlN substrates.
• The potential contract is valued at $10.2 million over three years.
• HexaTech aims to enhance the performance of high-voltage, high-frequency devices.
• The company will scale its production process from crystal growth to substrate finishing.
