Finwave Semiconductor and GlobalFoundries (GF) have announced a strategic partnership to accelerate the development and production of Finwave’s enhancement-mode (E-mode) MISHEMT RF GaN-on-Si technology, which is designed for next-generation cellular handset applications. This collaboration will leverage Finwave’s advanced GaN-on-Si technology and GF’s U.S.-based high-volume manufacturing capabilities to scale the technology for mass production at GF’s 200mm semiconductor facility in Vermont.
The new platform aims to enhance the performance of RF power amplifiers, offering high power density and efficiency, crucial for advanced wireless applications like 5G FR2/FR3, 6G, and Wi-Fi 7. The partnership is expected to enable the integration of RF Front-Ends onto a single GaN-on-Si device, reducing the cost and size of components in mobile phones. The technology is set to be qualified for mass production by 2026.
• Finwave and GlobalFoundries partner to scale Finwave’s E-mode MISHEMT RF GaN-on-Si technology.
• The collaboration focuses on high-volume production for next-gen cellular handset applications.
• The new platform supports advanced wireless applications, including 5G, 6G, and Wi-Fi 7.
• Expected to enable integration of RF Front-Ends onto a single GaN-on-Si device, reducing cost and size.
“This partnership opens the door to further innovation and integration of RF Front-Ends onto a single GaN-on-Si device. This has never been done before and has the potential to reduce cost and size, both of which are at a premium in cellphones,” said Dr. Pierre-Yves Lesaicherre, CEO of Finwave Semiconductor.
