Finwave Semiconductor secured $8.2 million in bridge funding to accelerate the commercialization of its proprietary gallium nitride on silicon (GaN-on-Si) technology for high-performance RF applications. The round was led by Fine Structure Ventures, Engine Ventures, and Safar Partners, with strategic backing from GlobalFoundries. The investment will support Finwave’s transition from R&D to product delivery as it targets fast-growing 5G/6G infrastructure and mobile device markets.
Finwave’s GaN-on-Si technology aims to combine GaN’s superior RF performance with the scale and cost-efficiency of silicon CMOS manufacturing. The company’s product lineup includes high-power RF switches already available through RFMW and upcoming power amplifiers for infrastructure and mobile markets. The funds will be used to expand product development, grow revenue streams, and scale manufacturing with GlobalFoundries as its foundry partner.
Founded by MIT researchers, Finwave is developing RF chips for a broad range of applications, including MIMO base stations, small cells, Wi-Fi routers, radar systems, and test and medical equipment. Its differentiated GaN FinFET and E-mode MISHEMT technologies are aimed at enabling higher efficiency, lower cost, and scalable RF performance.
- Finwave raised $8.2M from Fine Structure Ventures, Engine Ventures, Safar Partners, and GlobalFoundries.
- Funds will accelerate productization of GaN-on-Si RF switches and amplifiers.
- Key markets include 5G/6G base stations, mobile devices, radar, drones, Wi-Fi routers, and medical systems.
- Strategic partners include GlobalFoundries (foundry) and RFMW (distribution).
- Technology leverages GaN’s performance and silicon’s scale for high-volume RF chip production.
“This funding round validates the years of engineering and innovation behind our proprietary GaN-on-Si technology and provides resources we need to move from the development phase to delivering differentiated, high-performance products,” said Dr. Pierre-Yves Lesaicherre, CEO of Finwave.
