GlobalFoundries (GF) has unveiled its latest innovation in semiconductor technology with the introduction of 9SW RFSOI, an advanced radio frequency silicon-on-insulator (RFSOI) process designed for next-generation mobile and 5G applications. This new technology builds on GF’s previous 8SW platform and offers significant improvements in performance, integration, and power efficiency, specifically tailored for RF front-end modules (FEMs) in 5G networks. The 9SW technology is expected to enhance connectivity and extend battery life, addressing the growing demand for more efficient, high-performance wireless communication solutions.
Manufactured on 300mm wafers at GF’s Singapore facility, the 9SW RFSOI process is optimized for today’s 5G frequencies, including Sub-8 GHz, mmWave, and FR3. The technology offers a more energy-efficient solution with a significant reduction in standby currents, resulting in products that are over 10% smaller and more than 20% more efficient than previous generations. These advancements are set to provide better signal quality, faster data speeds, and more reliable connectivity for mobile and wireless communication devices.
• GF’s 9SW RFSOI technology is built on 300mm wafers for enhanced performance and efficiency.
• The technology offers over 10% size reduction and more than 20% efficiency improvement over previous generations.
• Designed for 5G applications, it supports Sub-8 GHz, mmWave, and FR3 frequencies.
• 9SW RFSOI will be produced at GF’s Singapore facility to meet growing market demand.“GF’s newest generation of industry-leading RF SOI technologies will allow us to meet the global demand for solutions that deliver more reliable seamless connectivity, while using significantly less power,” said Dr. Thomas Caulfield, President and CEO of GlobalFoundries.
