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Home » IBM Achieves 7nm Test Chips in Siilcon Germanium

IBM Achieves 7nm Test Chips in Siilcon Germanium

July 9, 2015
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IBM Research has produced the first 7nm (nanometer) node test chips with functioning transistors.  The milestone was achieved using Silicon Germanium (SiGe) channel transistors and Extreme Ultraviolet (EUV) lithography integration at multiple levels.

Current generation microprocessors are generally implemented in silicon using 22nm or 14nm technology.

IBM partnered with GLOBALFOUNDRIES and Samsung at SUNY Polytechnic Institute’s Colleges of Nanoscale Science and Engineering (SUNY Poly CNSE) to achieve the result.

“For business and society to get the most out of tomorrow’s computers and devices, scaling to 7nm and beyond is essential,” said Arvind Krishna, senior vice president and director of IBM Research. “That’s why IBM has remained committed to an aggressive basic research agenda that continually pushes the limits of semiconductor technology. Working with our partners, this milestone builds on decades of research that has set the pace for the microelectronics industry, and positions us to advance our leadership for years to come.”

http://www-03.ibm.com/press/us/en/pressrelease/47301.wss

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