Infineon Technologies has introduced a new trench-based silicon carbide (SiC) superjunction (TSJ) technology, aiming to push the performance boundaries of electric vehicle drivetrains and high-power industrial systems. Building on its leadership in both SiC power devices and silicon-based superjunction technologies, Infineon’s latest innovation combines trench architecture with superjunction benefits to achieve superior power density and system efficiency.
The first implementation of this technology will be a 1200 V TSJ-based device in Infineon’s ID-PAK package, tailored for automotive traction inverters. This design delivers up to 40% improvement in RDS(on)*A and supports current levels 25% higher than prior solutions, while maintaining short-circuit robustness. The scalable package supports systems up to 800 kW, making it ideal for both compact and high-power designs in EV and industrial applications. System benefits include reduced cooling needs, simplified inverter design, and lower overall system cost due to minimized parallelization.
Infineon plans to expand the CoolSiC portfolio with TSJ technology across multiple package types including discretes, modules, and bare dies. Hyundai Motor Company has already signed on as an early collaborator, aiming to incorporate the technology into its next-generation EV platforms. Volume production of the TSJ-based ID-PAK components is slated for 2027.
- New TSJ SiC technology integrates trench and superjunction design principles.
- First product: 1200 V ID-PAK for EV traction inverters, supports up to 800 kW.
- Achieves 40% lower RDS(on)*A and 25% higher current capability.
- Reduces cooling needs and system cost by minimizing parallelization.
- Hyundai is among early adopters; volume production set for 2027.
“Our new trench-based SiC superjunction technology brings further value to electric vehicle drivetrains, enabling higher efficiency and system design simplicity,” said Peter Schiefer, President of Infineon’s Automotive Division.
