Mitsubishi Electric will begin shipping samples in October of its new 200Gbps PIN-photodiode (PD) chip for use in next-generation optical transceivers to support 800Gbps and 1.6Tbps.
The addition of the new receiver chip to Mitsubishi Electric’s optical device lineup will enable existing devices capable of transmitting at 800Gbps/1.6Tbps to newly receive optical data at these same speeds, thereby expanding the communication capacity of optical transceivers, including for high-speed, high-capacity communication in data centers.
The upcoming introduction of the 200Gbps PIN-PD chip for optical reception follows Mitsubishi Electric’s launch of a mass-produced chip for optical transmission, the 200Gbps (112Gbaud four-level pulse-amplitude modulation [PAM4]) electro-absorption modulator laser diode (EML), in April this year.
The newly announced PD chip was developed by minimizing the photoelectric conversion area within a chip structure that integrates backside illumination* and a convex lens.
