OKI and NTT Innovative Devices have developed a mass production process for high-power terahertz devices that could accelerate adoption of next-generation 6G communications and non-destructive sensing technologies. The breakthrough leverages OKI’s proprietary crystal film bonding (CFB) technique to improve the performance and manufacturability of indium phosphide (InP)-based uni-traveling carrier photodiodes (UTC-PDs) bonded onto silicon carbide (SiC) substrates. Mass production is planned for FY2026.
Terahertz waves—occupying the band between radio and optical frequencies—offer unique advantages for high-capacity, low-latency wireless communications and high-resolution imaging and sensing. However, strong atmospheric attenuation demands high-power device performance, particularly for 6G applications using advanced modulation formats. The new process demonstrated a 10x improvement in output power (exceeding 1 mW at 1 dB compression) compared to prior designs, along with significant gains in bonding yield and thermal performance. CFB enables efficient use of expensive InP materials, reducing both costs and environmental impact.
OKI and NTT Innovative Devices are collaborating with Japanese universities and aim to commercialize these high-performance terahertz devices for both 6G networks and industrial sensing markets. The companies will showcase the technology at Laser World of Photonics 2025 in Munich.
- FY2026 target for mass production of high-power terahertz devices
- 10x improvement in output power using UTC-PD on SiC substrates
- OKI’s CFB bonding boosts yield from ~50% to nearly 100%
- High-performance terahertz waves seen as key enabler for 6G and non-invasive inspection
- Technology to be demonstrated at Laser World of Photonics 2025
“This co-creation work has established mass production technology for high-power terahertz devices and made real-world implementation a reality,” stated OKI and NTT Innovative Devices.
