onsemi introduced vertical GaN (vGaN) power semiconductors built on a proprietary GaN-on-GaN process, targeting high-power systems in AI data centers, EV drivetrains, renewable inverters, and aerospace. The devices conduct current vertically to support higher operating voltages and faster switching, positioning them for compact, higher-efficiency power conversion at the rack and vehicle level. Initial 700V and 1,200V parts are sampling to early access customers.
The company said vGaN can cut conversion losses by almost 50% versus incumbent solutions while enabling higher switching frequencies that shrink passives, reducing overall system size and cooling needs. Compared with commercial lateral GaN, the vertical devices are about three times smaller, improving power density for space- and thermally-constrained designs such as 800V AI server DC-DC stages and EV traction inverters.
onsemi emphasized US development and manufacturing, highlighting vGaN wafers produced at its Syracuse, New York fab and noting more than 130 global patents across process, device architecture, manufacturing, and system innovations supporting the platform. The company framed the launch against rising electricity demand from AI compute and electrification, pitching vGaN as a route to higher efficiency and ruggedness at elevated voltages.
• Technology: Vertical GaN (GaN-on-GaN) structure conducts current through the wafer to boost voltage handling and switching speed.
• Target voltages: 700V and 1,200V devices in sampling.
• Efficiency & density: Company claims ~50% loss reduction and ~3× smaller die vs lateral GaN; higher switching frequencies shrink passives.
• Manufacturing: Development and wafer manufacturing in Syracuse, NY.
• IP position: 130+ global patents spanning process, device, manufacturing, and systems.
• Applications: AI data-center 800V DC-DC, EV inverters/chargers, renewable inverters, ESS bidirectional converters, industrial drives, aerospace/defense.
“Vertical GaN is a game-changer for the industry and cements onsemi’s leadership in energy efficiency and innovation… With this breakthrough, onsemi is defining the future where energy efficiency and power density are the currency of competitiveness,” said Dinesh Ramanathan, Senior Vice President of Corporate Strategy, onsemi.
🌐 Analysis: Vertical GaN has gained traction as vendors push beyond the voltage/frequency limits of lateral GaN and challenge Si and SiC in high-power conversion; companies such as NexGen have previously disclosed 700V/1,200V vGaN devices, underscoring rapid ecosystem maturation. onsemi’s US-based manufacturing and patent portfolio signal an intent to scale vGaN alongside its broader power portfolio as AI rack power climbs and EV platforms standardize around higher voltages, while SiC incumbents (e.g., Wolfspeed) continue expanding capacity for traction and fast charging.
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