Samsung Electronics Co. announced the world’s first four gigabit (Gb) DDR3 DRAM chip, using 50 nanometer (nm) process technology. The 4Gb DDR3 can be produced in 16 gigabyte (GB) registered dual in-line memory modules (RDIMM) for servers, as well as 8GB unbuffered DIMM (UDIMM) for workstations and desktop PCs, and 8GB small outline DIMM (SODIMM) for laptops. By applying dual-die package technology, this new device can deliver modules of up to 32GB — offering twice as much capacity as memory modules based on the previous highest chip density of 2Gb.
Designed to be low-powered, the 4Gb DDR3 DRAM operates at 1.35 volts (V), therein improving its throughput by 20 percent over a 1.5V DDR3. Its maximum speed is 1.6 gigabits per second (Gbps). In 16GB module configurations, 4Gb DDR3 can consume 40 percent less power than 2Gb DDR3 because of its higher density and because it uses only half the DRAM (32 vs. 64 chips).
Samsung predicts the amount of memory per server doubling every two years and the development of high-density DRAM is expected to keep pace. Other applications include notebooks and desktop PCs.
http://www.samsung.com
- In September 2008, Samsung announced its development of the world’s first 50 nm-class 2Gb DDR3 DRAM.
