Samsung Electronics introduced its newest radio frequency (RF) technology based on 8-nanometer (nm) process.
Samsung’s 8nm RF process technology is the latest addition to an already broad portfolio of RF-related solutions, including 28nm- and 14nm-based RF. The company notes shiptment of more than 500 million mobile RF chips for premium smartphones since 2017.
Samsung has developed a unique architecture exclusive to 8nm RF named RFextremeFET (RFeFET) that can significantly improve RF characteristics while using less power. In comparison to 14nm RF, Samsung’s RFeFET supplements the digital PPA scaling and restores the analog/RF scaling at the same time, thereby enabling high-performance 5G platforms. Compared to 14nm RF, Samsung’s 8nm RF process technology provides up to a 35-percent increase in power efficiency with a 35-percent decrease in the RF chip area as a result of the RFeFET architectural innovation.
“Through excellence in innovation and process manufacturing, we’ve reinforced our next-generation wireless communication offerings,” said Hyung Jin Lee, Master of Foundry Technology Development Team at Samsung Electronics. “As 5G mmWave expands, Samsung’s 8nm RF will be a great solution for customers looking for long battery life and excellent signal quality on compact mobile devices.”
