Samsung Electronics Co. announced the industry’s first 45nm embedded flash (eFlash) logic process development. Potential applications include components for security solutions and mobile devices, including smart card IC, NFC IC, eSE (embedded secure element) and TPM (Trusted platform modules).
Samsung said a smart card IC based on this 45nm eFlash logic process has an endurance of 1 million cycles per flash memory cell (double current endurance results) and that random access time to read memory is 50 percent faster. Power efficiency is enhanced by 25 percent over previous products built on the 80nm eFlash logic process.
Initial smart card IC samples for commercialization using this 45nm eFlash logic technology are expected to be available in the second half of 2014.
http://www.samsung.com/global/business/semiconductor/news-events/press-releases/detail?newsId=12842
