Samsung Electronics started mass production of 16-gigabit (Gb) DDR5 DRAM designed for data center servers, HPC clusters, etc.
The new chips are based on the most advanced 12 nanometer (nm)-class process technology and boast a maximum speed of 7.2 gigabits per second (Gbps).
Compared to the previous generation, Samsung’s new 12nm-class DDR5 DRAM reduces power consumption by up to 23% while enhancing wafer productivity by up to 20%.
“Using differentiated process technology, Samsung’s industry-leading 12nm-class DDR5 DRAM delivers outstanding performance and power efficiency,” said Jooyoung Lee, Executive Vice President of DRAM Product & Technology at Samsung Electronics. “Our latest DRAM reflects our continued commitment to leading the DRAM market, not only with high-performance and high-capacity products that meet computing market demand for large-scale processing, but also by commercializing next-generation solutions that support greater productivity.”
