Samsung Electronics announced the start of mass production of the industry’s first 10-nanometer (nm) class, 8-gigabit (Gb) DDR4 (double-data-rate-4) DRAM chips and the modules derived from them. The milestone is expected to accelerate the industry-wide shift to advanced DDR4 products.
The production of Samsung’s 10nm-class DRAM uses ArF (argon fluoride) immersion lithography, free from the use of EUV (extreme ultra violet) equipment.
“Samsung’s 10nm-class DRAM will enable the highest level of investment efficiency in IT systems, thereby becoming a new growth engine for the global memory industry,” said Young-Hyun Jun, President of Memory Business, Samsung Electronics. “In the near future, we will also launch next-generation, 10nm-class mobile DRAM products with high densities to help mobile manufacturers develop even more innovative products that add to the convenience of mobile device users.”
The new DRAM supports a data transfer rate of 3,200 Mbps, which is more than 30 percent faster than the 2,400Mbps rate of 20nm DDR4 DRAM. Also, new modules produced from the 10nm-class DRAM chips consume 10 to 20 percent less power, compared to their 20nm-process-based equivalents, which will improve the design efficiency of next-generation, high-performance computing (HPC) systems and other large enterprise networks, as well as being used for the PC and mainstream server markets.
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