Samsung Foundry disclosed plans to begin 2nm process production for mobile applications in 2025, then expand to HPC in 2026 and automotive in 2027.
The company says its 2nm process (SF2) has shown a 12% increase in performance, a 25% increase in power efficiency and a 5% decrease in area, when compared to its 3nm process (SF3).
Some additional highlights from the 7th annual Samsung Foundry Forum (SFF) 2023 event in San Jose:
- Expanded production capacity at its Pyeongtaek fab Line 3 (P3)
- Launched a new “Multi-Die Integration (MDI) Alliance” for next-generation packaging for 2.5D and 3D Heterogeneous Integration.
- Continued progress in the foundry ecosystem with Samsung Advanced Foundry Ecosystem (SAFE™) partners. Samsung and its 23 EDA partners now offer over 80 design tools and is also collaborating with 10 OSAT partners to develop 2.5D/3D packaging design solutions.
- Mass production of SF1.4 will begin in 2027 as planned.
- From 2025, Samsung will begin foundry services for 8-inch gallium nitride (GaN) power semiconductors targeting consumer, data center and automotive applications.
- To secure the most cutting-edge technology in 6G, the 5nm Radio Frequency (RF) is also under development and will be available in the first half of 2025. Samsung’s 5nm RF process shows a 40% increase in power efficiency and a 50% decrease in area compared to the previous 14nm process.
- In addition, the company will add automotive applications to its 8nm and 14nm RF, expanding beyond the mobile applications currently under mass production.
- Samsung has secured a portfolio of over 4,500 key IPs from 50 global IP partners. Samsung plans to secure additional next-generation high-speed interface IPs for SF2, including LPDDR5x, HBM3P, PCIe Gen6 and 112G SerDes.
Source: Samsung Electronics
