Samsung introduced its 4th generation, 64-layer triple-level-cell V-NAND flash memory at this week’s Flash Memory Summit in Santa Clara, California.
By stacking 64 layers of cell-arrays, Samsung said it is now able to increase its single-die density to 512Gb and its IO speed to 800Mbps.
This makes possible 1 TB Flash in a device weighing less than 1g, weighing less than half of a U.S. dime. The Samsung 1TB BGA SSD will use an extremely compact, ball grid array (BGA) package design that contains all essential SSD components including triple-level-cell V-NAND flash chips, LPDDR4 mobile DRAM and a state-of-the-art Samsung controller. It will deliver unprecedented performance, reading sequentially at 1,500MB/s and writing sequentially at 900MB/s.
Samsung’s 4th generation V-NAND debut continues its trend of yearly performance bumps. Starting in August 2013, Samsung has previously introduced three generations of “industry-first” V-NAND products with 24, 32 and 48-layer vertical cell-array stacking technologies. Commercial production is expected in Q4.
Samsung also announced its latest Serial Attached SCSI (SAS) SSD — 32 TB — the world largest single drive introduced to date. This is also based on 512-gigabit (Gb) V-NAND chips. A total of 512 V-NAND chips are stacked in 16 layers to form a 1-terabyte (TB) package and the 32-terabyte (TB) SSD contains 32 of those packages.
