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Home » Samsung Launches Exynos 9 Processor Built on 10nm FinFET

Samsung Launches Exynos 9 Processor Built on 10nm FinFET

February 22, 2017
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Samsung Electronics announced mass production of its Exynos 9 Series 8895 premium application processor (AP) produced in 10-nanometer (nm) FinFET process technology with improved 3D transistor structure.  The 10-nm FinFET process allows up to 27% higher performance while consuming 40% less power when compared to 14nm technology.

Samsung’s new Exynos 9 Series 8895 is the first processor of its kind to embed a gigabit LTE modem that supports five carrier aggregation, or 5CA. It delivers data throughput at max.1Gbps (Cat.16) downlink with 5CA and 150Mbps (Cat.13) uplink with 2CA.

The Exynos 8895 is an octa-core processor, comprising of four of Samsung’s 2nd generation custom designed CPU cores for improved performance and power efficiency in addition to four Cortex®-A53 cores. With Samsung Coherent Interconnect (SCI) technology, the latest processor integrates a heterogeneous system architecture that allows faster computing for a wide range of applications such as artificial intelligence, and deep learning.

The Exynos 8895 also delivers unsurpassed multimedia experience with its powerful GPU and multi-format codec (MFC) as well as next level 3D graphic performance that minimizes latency for 4K UHD VR and gaming experience with ARM®’s latest Mali™-G71 GPU.

“In addition to being built on the most advanced 10nm FinFET process technology, the new Exynos 9 Series 8895 incorporates Samsung’s cutting-edge technologies including a 2nd generation custom CPU, gigabit LTE modem, and more,” said Ben Hur, Vice President of System LSI marketing at Samsung Electronics. “With industry leading technologies like VPU, the Exynos 8895 will drive the innovation of next generation smartphones, VR headsets, and automotive infotainment system.”

http://www.samsung.com

Tags: #MWC17Blueprint columnsSamsung
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