Samsung Electronics is nearing production of 16-gigabit (Gb) DDR5 DRAM built using the industry’s first 12-nanometer (nm)-class process technology. Product evaluation has been completed ensuring compatibility with AMD.
Samsung said the development was made possible through the use of a new high-κ material that increases cell capacitance, and proprietary design technology that improves critical circuit characteristics. Combined with advanced, multi-layer extreme ultraviolet (EUV) lithography, the new DRAM features the industry’s highest die density, which enables a 20 percent gain in wafer productivity. 
Samsung’s 12nm-class DRAM will help unlock speeds of up to 7.2 Gbps. The new DRAM consumes up to 23 percent less power than the previous DRAM.
“Our 12nm-range DRAM will be a key enabler in driving market-wide adoption of DDR5 DRAM,” said Jooyoung Lee, Executive Vice President of DRAM Product & Technology at Samsung Electronics. “With exceptional performance and power efficiency, we expect our new DRAM to serve as the foundation for more sustainable operations in areas such as next-generation computing, data centers and AI-driven systems.”
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