Source Photonics introduced a 200G per lane multi-channel monolithic indium phosphide (InP) photonic integrated circuit (PIC) designed for 1.6Tbps and future 3.2Tbps transceivers. This technology aims to enhance intra-data center and campus data center interconnections, addressing the growing bandwidth demands of hyperscale and AI-driven environments.
The company’s solution integrates distributed feedback (DFB) lasers and modulators within a monolithic InP-based PIC, delivering low driving voltage and high bandwidth. This design supports both linear direct-drive (LPO) and retimed optics, potentially reducing power consumption in 1.6Tbps optical transceivers. Additionally, the technology sets the stage for future 400Gbps per lane IMDD optical connectivity.
Source Photonics collaborated with a key technology partner to develop and validate this monolithic integrated multi-channel InP PIC-based solution for 1.6T and beyond IMDD data center and AI/ML cluster connectivity. Live demonstrations of the 200G/lane InP PIC powering a 1.6Tbps optical module, along with other high-performance optical transceiver solutions, will be available at Source Photonics’ booth #2143 during OFC 2025 in San Francisco.
• Unveiled 200G per lane multi-channel monolithic InP PIC for 1.6Tbps and future 3.2Tbps transceivers.
• Integrates DFB lasers and modulators within a monolithic InP-based PIC.
• Supports both linear direct-drive (LPO) and retimed optics.
• Potential to reduce power consumption in 1.6Tbps optical transceivers.
• Live demonstrations at OFC 2025, booth #2143 in San Francisco.
“Source Photonics is excited to bring the ground-breaking 1.6Tbps InP multi-channel PIC operating at 200G/lane to power a live IMDD pluggable transceiver demonstration at OFC 2025,” said Dr. John Wang, CEO of Source Photonics. “This successful demonstration of the 1.6Tbps intra-data center optics represents our commitment to investing in technology innovation and enhancing our leadership in InP transceivers.”
