STMicroelectronics has unveiled plans to establish a new high-volume silicon carbide (SiC) manufacturing facility in Catania, Italy. This facility will be part of ST’s Silicon Carbide Campus, designed for mass production of SiC power devices and modules, including a full range of manufacturing processes from substrate to packaging.
Key points include:
- Integration of Facilities: The new facility will work alongside an SiC substrate manufacturing site to create a fully integrated manufacturing hub for SiC on a single site.
- Silicon Carbide Campus Features: The campus will encompass all production stages, including SiC substrate development, epitaxial growth, and front-end wafer fabrication using 200mm technology. It will also handle module assembly and have extensive R&D and design capabilities.
- Production and Investment: Production is expected to start in 2026, with full capacity reached by 2033, producing up to 15,000 wafers weekly. The total investment is projected at about five billion euros, with around two billion euros in support from the Italian government under the EU Chips Act.
- Sustainability Commitment: The campus design and operations will emphasize sustainable practices, particularly in resource consumption like water and power.
“The fully integrated capabilities unlocked by the Silicon Carbide Campus in Catania will contribute significantly to ST’s SiC technology leadership for automotive and industrial customers through the next decades,” said Jean-Marc Chery, President and Chief Executive Officer of STMicroelectronics. “The scale and synergies offered by this project will enable us to better innovate with high-volume manufacturing capacity, to the benefit of our European and global customers as they transition to electrification and seek more energy efficient solutions to meet their decarbonization goals.”
