STMicroelectronics (NYSE: STM) rolled out new proprietary technologies targeting optical interconnects for data centers and AI clusters. The company launched its silicon photonics (SiPho) technology, PIC100, alongside an advanced BiCMOS55X platform, both designed to support 800 Gbps and 1.6 Tbps optical modules with production ramping up in the second half of 2025. These solutions address the surging demand for high-speed, energy-efficient data transfer driven by AI workloads, with manufacturing set for ST’s 300mm facility in Crolles, France.
The PIC100 integrates multiple photonic components onto a single chip, achieving silicon waveguide losses of 0.4 dB/cm (0.1 dB/in) and silicon nitride losses of 0.5 dB/cm (0.13 dB/in). It includes a 50 GHz Mach-Zehnder Modulator for signal modulation and an 80 GHz photodetector for high-speed reception, using edge couplers to keep coupling losses below 1.5 dB—outperforming grating couplers by reducing scattering. The BiCMOS55X, built on a 55 nm silicon germanium process, delivers transimpedance amplifiers and laser drivers for 200 Gbps and 400 Gbps per lane, combining bipolar transistor speed with CMOS logic efficiency. These advancements optimize optical transceivers, which convert signals between optical and electrical formats for GPU, switch, and storage connectivity, targeting the $7 billion pluggable optics market projected to reach $24 billion by 2030.
• PIC100 Technical Specs: Features edge couplers, 50 GHz modulator, 80 GHz photodetector; supports 200 Gbps per lane with scalability to 400 Gbps; reduces heat dissipation in pluggable modules.
• BiCMOS55X Details: Offers low-noise, high-linearity performance; enables linear pluggable optics (LPO) with reduced power use; suits 800 Gbps and 1.6 Tbps interconnects.
• Market Outlook: Aligns with LightCounting’s forecast of a 23% CAGR, as silicon photonics adoption grows from 30% in 2024 to 60% by 2030.
• Production Plan: Utilizes 300mm wafers in Crolles, France, for high-volume supply starting mid-2025.Remi El-Ouazzane, President of STMicroelectronics’ Microcontrollers, Digital ICs and RF products Group, stated, “AI demand is accelerating the adoption of high-speed communication technology within the datacenter ecosystem. This is the right time for ST to introduce new power efficient silicon photonics technology and complementing it with a new generation of BiCMOS for our customers to design the next wave of optical interconnect products, which will enable 800Gbps/1.6Tbps solutions for the hyperscalers.”
- STMicroelectronics, founded in 1987 via a merger of Italy’s SGS Microelettrica and France’s Thomson Semiconductors, operates as a global semiconductor firm headquartered in Geneva, Switzerland. Employing over 48,000 people across 35 countries, ST maintains 11 manufacturing sites, including the advanced 300mm fab in Crolles, France, which supports its latest photonic and BiCMOS technologies.
