Toshiba Electronic Devices & Storage Corporation will construct a new 300-milimeter wafer fabrication facility for power semiconductors at its main discrete semiconductor production base, Kaga Toshiba Electronics Corporation, in Ishikawa Prefecture. The project will increase Toshiba’s power semiconductor production capacity 2.5 times.
Construction will take place in two phases, allowing the pace of investment to be optimized against market trends, with the production start of Phase 1 scheduled for within fiscal 2024.
The new fab will have a quake absorbing structure; enhanced BCP systems, including dual power supply lines; and the latest energy saving manufacturing equipment to reduce environmental burdens. It will also aim to achieve the “RE100” goal of 100% reliance on renewable energy. Product quality and production efficiency will be improved by introducing artificial intelligence and automated wafer transportation systems.
