GlobalFoundries (GF) and the Massachusetts Institute of Technology (MIT) have entered into a master research agreement to enhance semiconductor technologies, particularly for artificial intelligence (AI) applications. This collaboration brings together GF’s semiconductor manufacturing expertise and MIT’s research capabilities to address pressing challenges in the field.
The initial research will focus on leveraging GF’s silicon photonics technology, which integrates radio frequency silicon-on-insulator (RF SOI), complementary metal-oxide semiconductor (CMOS), and optical features on a single chip. This integration aims to improve power efficiencies for data centers. Additionally, the partnership will utilize GF’s 22FDX platform, known for its ultra-low power consumption, to develop intelligent edge devices.
This agreement builds upon previous collaborations between GF and MIT, including GF’s participation in MIT’s Microsystems Industrial Group and joint workforce development initiatives. The partnership underscores a commitment to innovation and the development of semiconductor technologies essential for AI applications.
Key Points:
• Joint research on semiconductor technologies for AI applications
• Utilization of GF’s silicon photonics technology for data center efficiency
• Development of ultra-low power intelligent edge devices using GF’s 22FDX® platform
• Continuation of existing collaborations between GF and MIT
“By bringing together MIT’s world-renowned capabilities with GF’s leading semiconductor platforms, we are positioned to drive significant research advancements in GF’s essential chip technologies for AI,” said Gregg Bartlett, chief technology officer at GF.
