IBM and key technology partners announced a 28-nanometer (nm), high-k metal gate (HKMG), low-power bulk complementary metal oxide semiconductor (CMOS) process technology with the potential to increase the performance and battery life of a broad range of power-sensitive mobile and consumer electronics, including the fast-growing mobile Internet device market segment. The favorable leakage characteristics of the HKMG technology result in optimized battery life for the next generation of mobile products. IBM’s partners in this development include Chartered Semiconductor, GLOBALFOUNDRIES, Infineon Technologies, Samsung Electronics, and STMicroelectronics.
The companies had previously announced joint development work in 32nm HKMG technology.
A 28nm low-power technology evaluation kit was previously made available in December 2008 to early access clients, followed by release in March 2009 of an evaluation kit for open access to the general marketplace. Early risk production is anticipated in the second half of 2010.
http://www.ibm.com
