IBM Unveils Thin-Silicon SiGe Bipolar Transistor

IBM demonstrated a “thin-silicon” SiGe bipolar transistor that promises a fourfold boost in performance or a fivefold reduction in power consumption in wireless devices compared to the state-of-the-art thin-silicon bipolar technology. IBM said its new chip design uses a revolutionary thin wafer that combines CMOS and SiGe bipolar technology. The company presented details of its new chip design at this week’s 2003 Bipolar/BiCMOS Circuits and Technology Meeting.
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