Intel and Micron Technology previewd the industry’s first sub-40 nanometer (nm) NAND memory device, unveiling a 34nm 32 gigabit (Gb) multi-level cell chip. The device was developed for the next wave of solid-state drives for notebook computers and other portable devices.
This process technology was jointly developed by Intel and Micron and manufactured by the companies’ NAND flash joint venture, IM Flash Technologies (IMFT).
The companies said 34nm 32 Gb chips will be manufactured on 300 millimeter wafers, each producing approximately 1.6 terabytes of NAND. Measuring just 172mm², less than the size of a thumbnail, the 34nm 32 Gb chip will cost-effectively enable high-density solid-state storage in small form factor applications.
- A single 32 Gb chip could store more than 2,000 high-resolution digital photos or hold up to 1,000 songs on a personal music player.
- Two 8-die stacked packages would realize 64 gigabytes (GBs) of storage, enough for recording anywhere from eight to 40 hours of high-definition video in a digital camcorder.
Based on the 34nm architecture, Intel and Micron also plan to introduce lower density multi-level cell products including single-level cell products, by the end of this calendar year.http://www.intel.comhttp://www.micron.com
