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Home » Navitas Contributes GaN and SiC to NVIDIA’s 800V HVDC Initiative

Navitas Contributes GaN and SiC to NVIDIA’s 800V HVDC Initiative

May 26, 2025
in All, Semiconductors
A A

Navitas Semiconductor announced its participation in NVIDIA’s effort to develop an 800V high-voltage direct current (HVDC) architecture aimed at improving power delivery in next-generation AI data centers. The company’s gallium nitride (GaN) and silicon carbide (SiC) power semiconductors will be used to support rack-scale systems such as NVIDIA’s Kyber platform, targeting power capacities of 1 megawatt and above.

The shift to 800V HVDC architecture is intended to improve efficiency and reduce the complexity of traditional 54V data center power distribution. By converting 13.8kV AC grid power directly to 800V HVDC at the facility perimeter, the system minimizes intermediate conversion steps and reduces copper requirements. Navitas’ GaNFast™ and GeneSiC™ devices are positioned to support both primary high-voltage conversion and secondary DC-DC conversion within the rack.

Navitas has introduced several data center-optimized power solutions in recent years, including an 8.5 kW power supply with 98% efficiency and compact form factors compliant with Open Compute Project (OCP) specifications. Its patented IntelliWeave™ control architecture and GaNSafe™ power ICs are designed to improve power factor correction and system reliability in high-density compute environments.

  • Navitas joins NVIDIA’s 800V HVDC initiative with GaNFast and GeneSiC technologies
  • GaN and SiC semiconductors support high-efficiency power delivery from grid to GPU
  • Architecture aims to eliminate 54V bottlenecks and reduce copper usage in AI data centers
  • Navitas has released AI-ready power supplies achieving up to 99.3% PFC efficiency
  • Solutions align with ORv3 and OCP standards for next-gen rack-scale systems

“We are proud to be selected by NVIDIA to collaborate on their 800 HVDC architecture initiative. Our latest innovations in high-power GaN and SiC technologies have seen world firsts and have created new inflections into markets such as AI datacenters and electric vehicles,” said Gene Sheridan, CEO and co-founder of Navitas.

  • Navitas Semiconductor, headquartered in Torrance, California, was founded in 2014 as a pure-play next-generation power semiconductor company. Its portfolio includes GaNFast™ power ICs and GeneSiC™ power devices, focused on high-efficiency, high-density applications across AI data centers, electric vehicles, solar energy, energy storage, and industrial systems. The company holds over 300 patents issued or pending and claims the industry’s first 20-year warranty for GaN-based products. Notable product milestones include a 3.2 kW CRPS power supply with 40% size reduction over legacy silicon and the industry’s highest-density 4.5 kW CRPS unit at 137 W/in³. Navitas is also a founding member of the GaN industry ecosystem.
Tags: GaNNavitas
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