Vitesse Semiconductor announced a complete physical media dependent (PMD) chipset for 10 Gbps Ethernet Passive Optical Networks (10G-EPON). Vitesse expects bandwidth intensive applications in FTTH networks will drive the need for 10G-EPON in the network.
Vitesse leveraged its 1G-EPON devices to create the new 10G-EPON chipset. It pairs four integrated circuits (ICs) to address both the transmit and the receive paths within the network. For the transmit path, Vitesse offers the industry’s first 10 Gbps burst mode driver combination: a 10 Gbps direct-modulated-laser diode (DML) driver, the VSC7981, with a highly integrated laser burst mode controller, the VSC7960. On the receive side, Vitesse provides a high-performance continuous mode solution using its VSC7978 10 Gbps transimpedance amplifier (TIA) and the VSC7987 limiting post amplifier. Together, this 10G-EPON chipset is compliant with the IEEE P802.3av/D3.0 standard which allows for the coexistence of 1G-EPON and 10G-EPON systems on the same distribution network.
“Considering the current mass-deployed 1G-EPON in Asia is growing over 40-percent year-over-year, many industry experts foresee next-generation 10G-EPON-based products maturing enough for initial commercial deployments by late 2009 or early 2010,” said Angus Lai, product marketing manager for Vitesse. “Understanding the needs of our customers and consumers, Vitesse has capitalized on its success with 1G-EPON deployments in Asia to provide the first 10G-EPON standards-compliant chipset that makes next-generation FTTH technology a reality.”http://www.vitesse.com
